| PART |
Description |
Maker |
| IXGH24N50BS IXGH24N60BS |
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 48A I(C) | TO-247SMD
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 48A I(C) | TO-247SMD 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 48A条一（c）|47SMD
|
IXYS, Corp.
|
| ITZ08F12P ITZ08F12B |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-247
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-220AB 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 16A条一（c）| TO - 220AB现有
|
Microsemi, Corp.
|
| ISL9G1260EP3 ISL9G1260ES3 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|甲一（c）|63AB
|
Hynix Semiconductor, Inc.
|
| 878-2-3 SD878-2-3 |
CAP & CHAN, SMA
|
Winchester Electronics Corporation
|
| IRGC5B120UB |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP
|
|
| CT20ASJ8 |
TRANSISTOR | IGBT | N-CHAN | 400V V(BR)CES | 130A I(C) | TO-252 晶体管| IGBT的|正陈| 400V五（巴西）国际消费电子展| 130A条一（c）|52
|
Mitsubishi Electric, Corp.
|
| F8A06FF |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-220VAR 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 8A条一（c）|20VAR
|
Glenair, Inc.
|
| IXGA15N120C |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 30A I(C) | TO-263AA 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 30A条一（c）|63AA
|
IXYS, Corp.
|
| MUX28BTC883 |
36V; 25mA; 16-channel/dual 8-chan JFET analog multiplexer. For geometry correction in high-resolution CRT displays
|
Analog Devices
|
| FHC40LG |
TRANSISTOR,HEMT,N-CHAN,3.5V V(BR)DSS,10MA I(DSS),SOT-173VAR
From old datasheet system
|
Fujitsu Ltd
|
| HGT1S5N120BNDS HGT1S5N120BNDS9A |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 10A I(C) | TO-263AB
21A, 1200V, NPT Series N-Channel IGBTswith Anti-Parallel Hyperfast Diodes
|
Fairchild Semiconductor
|
